Method to integrate DC and RF phase change switches into high-speed SiGe BiCMOS

US11522010B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Patrick B. Shea · Alexandria, US
• Robert M. Young · Ellicott City, US
• Keith Chung · Columbia, US
• Andris Ezis · Ellicott City, US
• Ishan Wathuthanthri · Baltimore, US

Key dates

• Filing date: Aug 19, 2019
• Grant date: Dec 6, 2022
• Expiry date: Aug 19, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.