Variable resistance memory device
US11522015B2 · kind B2 · utility
0Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2020 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Jan 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.