Metal oxide semiconductor field-effect transistor (MOSFET) devices and manufacturing methods thereof
US11522064B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2021 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Jun 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.