Light emitting diode and fabrication method thereof

US11522107B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Cheng Meng · Xiamen, CN
• Yuehua JIA · Xiamen, CN
• Jing Wang · Tianjin, CN
• Chun-Yi Wu · New Taipei, TW
• Ching-Shan Tao · Xiamen, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Jun 1, 2020
• Grant date: Dec 6, 2022
• Expiry date: Jun 1, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8316

Abstract

A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.