Light emitting diode and manufacturing method thereof

US11522112B2 · kind B2 · utility

Assignees

• LEXTAR ELECTRONICS CORPORATION · TW
• ULTRA DISPLAY TECHNOLOGY CORP. · TW

Inventors

• Shiou-Yi KUO · Hsinchu, TW
• Jian Liang · Hsinchu, TW
• Shen-De CHEN · Taipei, TW

Key dates

• Filing date: Jan 30, 2020
• Grant date: Dec 6, 2022
• Expiry date: Mar 28, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/82

Abstract

A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer, a coupling layer, and a sacrificial thin film. The first type semiconductor layer and the second type semiconductor layer are disposed at opposite sides of the active layer. The coupling layer is disposed on the second type semiconductor layer. The sacrificial thin film is disposed on the coupling layer, in which the coupling layer is disposed between the sacrificial thin film and the second type semiconductor layer, and the sacrificial thin film has a thickness less than a total thickness of the first type semiconductor layer, the active layer, the second type semiconductor layer and the coupling layer.