Integrated multiple-path power amplifier

US11522499B2 · kind B2 · utility

Assignee

• NXP USA, Inc. · US

Inventors

• Xavier Hue · Bremen, DE
• Margaret A. Szymanowski · Chandler, US
• Xin Fu · Jiaocheng District, CN

Key dates

• Filing date: Dec 4, 2020
• Grant date: Dec 6, 2022
• Expiry date: Aug 17, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03F2200/451
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A multiple-path amplifier (e.g., a Doherty amplifier) includes first and second transistors (e.g., main and peaking transistors) with first and second output terminals, respectively, all of which is integrally-formed with a semiconductor die. A signal path through the second transistor extends in a direction from a control terminal of the second transistor to the second output terminal, where the second output terminal corresponds to or is closely electrically coupled to a combining node. The amplifier also includes an integrated phase delay circuit that is configured to apply an overall phase delay (e.g., 90 degrees) to a signal carried between the first and second output terminals. The integrated phase delay circuit includes delay circuit wirebonds coupled between the first and second output terminals, and the delay circuit wirebonds extend in a third direction that is angularly offset from (e.g., perpendicular to) the second direction.