Low temperature direct bonding of aluminum nitride to AlSiC substrates
US11524359B2 · kind B2 · utility
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2References
33Claims
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Key dates
| Filing date | Aug 23, 2018 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Apr 11, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2237/72
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Disclosed herein are power electronic modules formed by directly bonding a heat sink to a dielectric substrate using transition liquid phase bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.