Substrate for epitaxtail, growth and method for producing same
US11524486B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 21, 2016 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Oct 25, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E40/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
It is an object to provide a method for producing a substrate for epitaxial growth having a higher degree of biaxial crystal orientation without forming an irregular part a3. The method for producing a substrate for epitaxial growth comprising a step of laminating a metal base material and a copper layer having an fcc rolling texture by surface-activated bonding, a step of applying mechanical polishing to the copper layer, and a step of carrying out orientation heat treatment of the copper layer, wherein the copper layer is laminated in such a way that, when ratios of the (200) plane of the copper layer before laminated and of the copper layer after laminated when measured by XRD are I0Cu and I0CLAD, respectively and ratios of the (220) plane of the copper layer before laminated and of the copper layer after laminated are I2Cu and I2CLAD, respectively, I0Cu<20%, I2Cu=70 to 90%, and I0CLAD<20%, I2CLAD=70 to 90% and I0CLAD−I0Cu<13%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.