Formation of pores in atomically thin layers

US11524898B2 · kind B2 · utility

Assignees

• Massachusetts Institute of Technology · US
• KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS · SA

Inventors

• Piran R. Kidambi · Nashville, US
• Ahmed Ibrahim · Riyadh, SA
• Tahar Laoui · Dhahran, SA
• Jing Kong · Winchester, US
• Rohit N. Karnik · Cambridge, US
• Sui Zhang · Singapore, SG

Key dates

• Filing date: Nov 3, 2017
• Grant date: Dec 13, 2022
• Expiry date: May 10, 2039

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/56
• WIPO field: Chemical engineering
• WIPO sector: Chemistry

Abstract

Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.