Methods of measuring real-time junction temperature in silicon carbide power MOSFET devices using turn-on delay, related circuits, and computer program products
US11525740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Apr 9, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K2217/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of measuring a junction temperature of a SiC MOSFET can be provided by applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET, detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET, detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value, defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET and determining the junction temperature for the SiC MOSFET using the turn on delay time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.