Ion implanter and model generation method
US11527381B2 · kind B2 · utility
1Cited by
1References
11Claims
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Key dates
| Filing date | Mar 3, 2021 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Mar 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.