Semiconductor device
US11527526B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 1, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Feb 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/907
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor device manufacturing method. The method includes: providing a semiconductor substrate, including a high-frequency-block group and a low-power-block group; forming high-frequency-type logic standard cells on the high-frequency-block group of the semiconductor substrate. The high-frequency-type logic standard cells have a high-frequency-type cell height, a high-frequency-type operating frequency, and a high-frequency-type power. The method further includes forming low-power-type logic standard cells on the low-power-block group of the semiconductor substrate. The low-power-type logic standard cells have a low-power-type cell height, a low-power-type operating frequency, and a low-power-type power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.