Manufacturing method of image sensor
US11527564B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2021 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Jul 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A manufacturing method of an image sensor including the following steps is provided. A substrate is provided. A light sensing device is formed in the substrate. A storage node is formed in the substrate. The storage node and the light sensing device are separated from each other. A buried gate structure is formed in the substrate. The buried gate structure includes a buried gate and a first dielectric layer. The buried gate is disposed in the substrate and covers at least a portion of the storage node. The first dielectric layer is disposed between the buried gate and the substrate. A first light shielding layer is formed on the buried gate. The first light shielding layer is located above the storage node and electrically connected to the buried gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.