Color and infrared image sensor
US11527565B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Feb 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/32
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.