GaN-based threshold switching device and memory diode
US11527573B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Mar 29, 2021 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Aug 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.