Semiconductor Schottky rectifier device
US11527627B2 · kind B2 · utility
1Cited by
1References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 7, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Jul 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor Schottky rectifier built in an epitaxial semiconductor layer over a substrate has an anode structure and a cathode structure extending from the surface of the epitaxial layer. The cathode contact structure has a trench structure near the epi-layer and a vertical sidewall surface covered with a gate oxide layer. The cathode structure further comprises a polysilicon element adjacent to the gate oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.