Optoelectronic apparatus with a photoconductive gain

US11527662B2 · kind B2 · utility

Assignee

• FUNDACIÓ INSTITUT DE CIENCIES FOTÒNIQUES · ES

Inventors

• Gerasimos Konstantatos · Castelldefels, ES
• Frank Koppens · Barcelona, ES
• Dominik Kufer · Barcelona, ES
• Ivan Nikitskiy · Barcelona, ES

Key dates

• Filing date: Jul 15, 2015
• Grant date: Dec 13, 2022
• Expiry date: Jul 15, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/00

Abstract

An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor layer (3), such as MoS2, and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.