Tunnel junctions for multijunction solar cells
US11527667B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 27, 2018 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Jul 31, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.