Patent · US Active

Tunnel junctions for multijunction solar cells

US11527667B2 · kind B2 · utility

1Cited by
2References
6Claims
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Key dates

Filing dateApr 27, 2018
Grant dateDec 13, 2022
Priority date
Expiry dateJul 31, 2038

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/544

Abstract

Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.