Stacked monolithic multi-junction solar cell
US11527668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2021 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Sep 7, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A stacked monolithic multi-junction solar cell having at least four subcells, wherein the band gap increases starting from the first subcell in the direction of the fourth subcell, each subcell has an n-doped emitter and a p-doped base, the emitter and the base of the first subcell each are formed of germanium, all following subcells each have at least one element of main group III and V of the periodic table, all subcells following the first subcell are formed lattice-matched to one another, a semiconductor mirror having a plurality of doped semiconductor layers with alternately different refractive indices is placed between the first and second subcell, the semiconductor layers of the semiconductor mirror are each formed n-doped and each have a dopant concentration of at most 5·1018 cm−3, the semiconductor mirror is placed between the first subcell and the first tunnel diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.