Semiconductor light emitting chip and its manufacturing method

US11527679B2 · kind B2 · utility

Assignee

• XIAMEN CHANGELIGHT CO., LTD. · CN

Inventors

• Xingen WU · Xiamen, CN
• Yingce LIU · Xiamen, CN
• Junxian Li · Zhejiang, CN
• Zhendong Wei · Xiamen, CN

Key dates

• Filing date: Jul 30, 2019
• Grant date: Dec 13, 2022
• Expiry date: Sep 19, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8316

Abstract

A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.