Ultra-fast magnetic random access memory having a composite SOT-MTJ structure
US11527708B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Apr 15, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Dec 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An ultra-fast magnetic random access memory (MRAM) comprises a three terminal composite SOT magnetic tunneling junction (CSOT-MTJ) element including a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.