BAW resonance device, filter device and RF front-end device
US11528006B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Feb 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A BAW resonance device comprises a first layer including a cavity located on a first side, a first electrode having a first end located in the cavity and a second end contacting with the first layer, a second layer located on the first side, and a second electrode located on the second layer above the cavity, wherein the first electrode and the second electrode are located on two sides of the second layer. The first electrode comprises a first electrode layer and a second electrode layer, and the second electrode layer and the second layer are located on two sides of the first electrode layer. The second electrode comprises a third electrode layer and a fourth electrode layer, and the second layer and the fourth electrode layer are located on two sides of the third electrode layer. Thus, the electrical resistance is lowered and the electrical losses are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.