Patent · US Active

Current sensor device

US11531046B2 · kind B2 · utility

0Cited by
0References
14Claims
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Assignee

Inventors

Key dates

Filing dateSep 24, 2021
Grant dateDec 20, 2022
Priority date
Expiry dateSep 24, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R33/075
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A sensor device includes a silicon substrate having an active surface; a first sensing area disposed near a first edge of the active surface of the silicon substrate such that the first sensing area has at least one first magnetic sensing element is made of a first compound semiconductor material and contact pads; and a second sensing area disposed near a second edge of the active surface of the silicon substrate, such that the second edge is substantially opposite to the first edge, such that the second sensing area has at least one second magnetic sensing element made of a second compound semiconductor material and contact pads. A processing circuit is disposed of in the silicon substrate and is electrically connected via wire bonds and/or a redistribution layer with the contact pads of the first and second sensing areas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.