High frequency module having power amplifier mounted on substrate
US11532544B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Jul 8, 2020 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Jul 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1421
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency module includes a power amplifier and a substrate on which the power amplifier is mounted. The power amplifier includes a first external terminal and a second external terminal formed on a mounting surface. The substrate includes a first land electrode and a second land electrode formed on one principal surface. The first external terminal is connected to the first land electrode, and the second external terminal is connected to the second land electrode. A distance from the mounting surface to a connection surface of the first external terminal is shorter than a distance from the mounting surface to a connection surface of the second external terminal, and a distance from a connection surface of the first land electrode to the one principal surface is longer than a distance from a connection surface of the second land electrode to the one principal surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.