Patent · US Active

Semiconductor module

US11532600B2 · kind B2 · utility

3Cited by

5References

8Claims

0Family size

Assignee

DANFOSS SILICON POWER GMBH · DE

Inventors

Alvaro Jorge Mari Curbelo · Unterschleißheim, DE
Tobias Schuetz · Bad Abbach, DE
Robert Roesner · Oberschleißheim, DE

Key dates

Filing date	May 14, 2020
Grant date	Dec 20, 2022
Priority date	—
Expiry date	Jun 13, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/49175
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A half bridge power module (1) comprising a substrate (2) comprising an inner load track (11), two intermediate load tracks (12, 14) and two outer load tracks (10,13), wherein an external terminal is mounted on one of the intermediate load tracks (12, 14), an external terminal (3, 4) is mounted on one of the outer load tracks (10, 13) and an external terminal (5) is mounted on the inner load track (11); wherein semiconductor switches (101, 12, 105, 106) are mounted on the outer load tracks (10, 13) and are electrically connected to the intermediate load track (12); and semiconductor switches (103, 104, 107, 108) are mounted on the intermediate load tracks (12, 14) and are electrically connected to the inner load track (11).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.