Thin film structure including dielectric material layer and electronic device including the same
US11532722B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2020 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Nov 22, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.