Semiconductor devices and methods of manufacture

US11532731B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Wei Yang · Longbeilingcun, CN
• Ming-Hua Yu · Hsinchu, TW

Key dates

• Filing date: Feb 4, 2021
• Grant date: Dec 20, 2022
• Expiry date: Apr 25, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

Semiconductor devices and methods of forming semiconductor devices are described herein. A method includes forming a first fin and a second fin in a substrate. A low concentration source/drain region is epitaxially grown over the first fin and over the second fin. The material of the low concentration region has less than 50% by volume of germanium. A high concentration contact landing region is formed over the low concentration regions. The material of the high concentration contact landing region has at least 50% by volume germanium. The high concentration contact landing region has a thickness of at least 1 nm over a top surface of the low concentration source/drain region.