System and method of generating quantum unitary noise using silicon based quantum dot arrays
US11533046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2021 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Nov 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A novel and useful system and method of generating quantum unitary noise using silicon based quantum dot arrays. Unitary noise is derived from a probability of detecting a particle within a quantum dot array structure comprising position based charge qubits with two time independent basis states |0> and |1>. A two level electron tunneling device such as an interface device, qubit or other quantum structure is used to generate quantum noise. The electron tunneling device includes a reservoir of particles, a quantum dot, and a barrier that is used to control tunneling between the reservoir and the quantum dot. A detector circuit connected to the device outputs a digital stream corresponding to the probability of a particle of being detected. Controlling the bias applied to the barrier controls the probability of detection. Thus, the probability density function (PDF) of the output unitary noise can be controlled to correspond to a desired probability. The unitary noise can be used in stochastic rounding by controlling the bias applied to the barrier in accordance with a remainder of numbers to be rounded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.