Systems and methods of compensating for narrowband distortion in power semiconductor devices
US11533070B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2020 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Nov 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B2001/0425
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Some embodiments herein describe a radio frequency power semiconductor device that include a first non-linear filter network for compensating for lower frequency noise of a power amplifier. The first non-linear filter network can include a plurality of infinite impulse response filters and corresponding corrective elements to correct for a non-linear portion of the power amplifier. The radio frequency power semiconductor device can further include a second non-linear filter network for compensating for broadband distortion. The second non-linear filter network can be connected in parallel to the first non-linear filter network. The broadband distortion can include digital predistortion and the narrowband distortion can include charge trapping effects. The first non-linear filter network can comprise Laguerre filters. The second non-linear filter network can comprise general memory polynomial filters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.