Integrated bandgap temperature sensor
US11536899B2 · kind B2 · utility
2Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2020 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Sep 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06804
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.