Method of manufacturing semiconductor device
US11537041B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2020 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Jan 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54426
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: forming a first outer box and a second outer box on a wafer, providing a photoresist layer on the wafer; and by removing a portion of the photoresist layer, forming a photoresist pattern including a first opening and a second opening that are horizontally apart from each other, wherein the first opening defines a first inner box superimposed on the first outer box in a plan view, the second opening defines a second inner box superimposed on the second outer box in the plan view, and a horizontal distance between the first opening and the second opening is about 150 μm to about 400 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.