Ion beam lithography method based on ion beam lithography system
US11538653B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2020 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Feb 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/095
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses an ion beam lithography method based on an ion beam lithography system. The ion beam lithography system includes a roll-roll printer placed in a vacuum, and a medium-high-energy wide-range ion source, a medium-low-energy wide-range ion source and a low-energy ion source installed on the roll-roll printer. The ion beam lithography method includes: first coating a polyimide (PI) substrate with a dry film, etching the dry film according to a preset circuit pattern, then using the ion beam lithography system to deposit a wide-energy-range metal ion on the circuit pattern to form a film substrate, and finally stripping the dry film off the film substrate to obtain a printed circuit board (PCB).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.