Method of using optoelectronic semiconductor stamp to manufacture optoelectronic semiconductor device
US11538785B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2020 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Dec 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of using an optoelectronic semiconductor stamp to manufacture an optoelectronic semiconductor device comprises the following steps: a preparation step: preparing at least one optoelectronic semiconductor stamp group and a target substrate, wherein each optoelectronic semiconductor stamp group comprises at least one optoelectronic semiconductor stamp, each optoelectronic semiconductor stamp comprises a plurality of optoelectronic semiconductor components disposed on a heat conductive substrate, each optoelectronic semiconductor component has at least one electrode, and the target substrate has a plurality of conductive portions; an align-press step: aligning and attaching at least one optoelectronic semiconductor stamp to the target substrate, so that the electrodes are pressed on the corresponding conductive portions; and a bonding step: electrically connecting the electrodes to the corresponding conductive portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.