Photoelectric conversion device and imaging apparatus
US11538863B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 7, 2018 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Aug 28, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.