Shielded trench devices
US11538911B2 · kind B2 · utility
2Cited by
22References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2020 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Jun 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A shield trench power device such as a trench MOSFET or IGBT employs a gate structure with an underlying polysilicon shield region overlying a shield region in an epitaxial or crystalline layer of the device. The polysilicon region may be laterally confined by spacers in a gate trench and may contact or be isolated from the underlying shield region. Alternatively, the polysilicon region may be replaced with an insulating region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.