Semiconductor device and method of manufacturing a semiconductor device
US11538926B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Apr 1, 2020 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | May 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a plurality of work function metal layers and an oxygen absorbing layer over a channel region of the semiconductor device, including forming a first work function metal layer over the channel region, forming an oxygen absorbing layer over the first work function metal layer, forming a second work function metal layer over the oxygen absorbing layer. A gate electrode metal layer is formed over the plurality of work function metal layers. The work function metal layers, oxygen absorbing layer, and gate electrode metal layer are made of different materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.