Bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor, and manufacturing method thereof

US11538930B2 · kind B2 · utility

Assignee

• Xidian University · CN

Inventors

• Chunfu Zhang · Xi'an, CN
• Weihang Zhang · Tianjin, CN
• Jiaqi Zhang · Baltimore, US
• Guofang Yang · Xi'an, CN
• Yichang Wu · Xi'an, CN
• Dazheng Chen · Xi'an, CN
• Jincheng Zhang · Xi'an, CN
• Yue Hao · Xi'an, CN

Key dates

• Filing date: Mar 15, 2021
• Grant date: Dec 27, 2022
• Expiry date: Jun 29, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor, which mainly solves a problem that the existing monolithic heterogeneous integrated Cascode-structure field effect transistor has no reverse blocking characteristic. The field effect transistor includes a substrate, a GaN buffer layer, an AlGaN barrier layer and a SiN isolation layer, wherein an isolation groove is etched in the middle of the SiN isolation layer, a Si active layer is printed on the SiN isolation layer on one side of the isolation groove so as to prepare a Si metal oxide semiconductor field effect transistor, and a GaN high-electron-mobility transistor is prepared on the other side of the isolation groove, and a drain electrode of the GaN high-electron-mobility transistor is in Schottky contact with the AlGaN barrier layer to form a bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor.