Optoelectronic semiconductor chip and method of manufacturing an optoelectronic semiconductor chip

US11538964B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• David O'Brien · Portland, US
• Désirée Queren · Neutraubling, DE
• David Racz · Regensburg, DE
• Britta Goeoetz · Regensburg, DE
• Michael Schumann · Stuttgart, DE

Key dates

• Filing date: Oct 16, 2018
• Grant date: Dec 27, 2022
• Expiry date: Jan 12, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/882
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.