Solid-state imaging element and electronic device
US11539011B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2019 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Nov 29, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.