Electronic semiconducting device, method for preparing the electronic semiconducting device and compound

US11539014B2 · kind B2 · utility

Assignee

• Novaled GmbH · DE

Inventors

• Ulrich Heggemann · Dresden, DE
• Markus Hummert · Dresden, DE

Key dates

• Filing date: Feb 16, 2018
• Grant date: Dec 27, 2022
• Expiry date: Dec 12, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.