Substrate integrated waveguide transition including a metallic layer portion having an open portion that is aligned offset from a centerline
US11539107B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2020 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Dec 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/0195
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Example embodiments relate to substrate integrated waveguide (SIW) transitions. An example SIW may include a dielectric substrate having a top surface and a bottom surface and a first metallic layer portion coupled to the top surface of the dielectric substrate that includes a single-ended termination, an impedance transformer, and a metallic rectangular patch located within an open portion in the first metallic layer portion such that the open portion forms a non-conductive loop around the metallic rectangular patch. The SIW also includes a second metallic layer portion coupled to the bottom surface of the dielectric substrate and metallic via-holes electrically coupling the first metallic layer to the second metallic layer. The SIW may be implemented in a radar unit to couple antennas to a printed circuit board (PCB). In some examples, the SIW may be implemented with only a non-conductive opening that lacks the metallic rectangular patch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.