Bidirectional image-rejection active array with reduced LO requirement
US11539383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2020 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Nov 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6677
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
An RF frontend integrated circuit (IC) device comprises one or more RF transceivers to transmit and receive RF signals within a first frequency band and a second frequency band that is higher than the first frequency band. The RF frontend IC device further comprises a bidirectional LO signal generation circuit coupled to the one or more transceivers to generate a bidirectional LO signal. The bidirectional LO signal is injected between the first frequency band and the second frequency band. The bidirectional LO signal generation circuit is to perform a high-side LO injection for the RF signals within the first frequency band by injecting the bidirectional LO signal having an LO frequency higher than the first frequency band and to perform a low-side LO injection for the RF signals within the second frequency band by injecting the bidirectional LO signal having the LO frequency lower than the second frequency band.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.