Patent · US Active

Sensor misalignment measuring device

US11543229B2 · kind B2 · utility

0Cited by
15References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 8, 2021
Grant dateJan 3, 2023
Priority date
Expiry dateApr 8, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/14
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.