Optical dielectric planar waveguide process
US11543588B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Oct 25, 2021 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Oct 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing silicon oxynitride film structures is provided that is used to form planar waveguides. These film structures are deposited on substrates and the combination of the substrate and the planar waveguide is used in the formation of optical interposers and subassemblies. The silicon oxynitride film structures are deposited using low thermal budget processes and hydrogen-free oxygen and hydrogen-free nitrogen precursors to produce planar waveguides that exhibit low losses for optical signals transmitted through the waveguide of 1 dB/cm or less. The silicon oxynitride film structures and substrate exhibit low stress levels of less than 20 MPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.