Process flow with wet etching for smooth sidewalls in silicon nitride waveguides
US11543589B2 · kind B2 · utility
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2References
14Claims
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Key dates
| Filing date | Sep 14, 2021 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Sep 14, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.