Formation and in-situ etching processes for metal layers
US11545363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2020 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Mar 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.