Semiconductor structure and method for forming the same

US11545396B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Deyan Chen · Singapore, SG
• Mao-Ruei Li · Beijing, CN
• Dae-Sub Jung · Shanghai, CN

Key dates

• Filing date: Jul 24, 2020
• Grant date: Jan 3, 2023
• Expiry date: Jul 24, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0135

Abstract

A method for forming a semiconductor structure includes providing a substrate, including a first region and a second region; forming a plurality of fin structures on the substrate; forming an isolation structure between adjacent fin structures; forming a mask layer over the substrate and the plurality of fin structures; forming an opening by removing a portion of the mask layer formed in the first region; removing a portion of the isolation structure exposed in the opening by using a remaining portion of the mask layer as a mask; removing the remaining portion of the mask layer; and forming a gate structure across the plurality of fin structures. The gate structure covers the first region.