Integrated thin film resistor and metal-insulator-metal capacitor
US11545486B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2020 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Feb 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/85
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to an integrated thin film resistor with a metal-insulator-metal capacitor and methods of manufacture. The structure includes: a first buffer contact on a substrate; a second buffer contact on the substrate, the second buffer contact being on a same wiring level as the first buffer contact; a resistive film contacting the first buffer contact and the second buffer contact, the resistive film extending on the substrate between the first buffer contact and the second buffer contact; and electrical contacts landing on both the first buffer contact and the second buffer contact, but not directly contacting with the resistive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.