Metal oxide (MO semiconductor and thin-film transistor and application thereof
US11545580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2020 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Nov 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (In2O3)x(MO)y(RO)z semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.