Piezoelectric sensor, pressure detecting device, manufacturing methods and detection method
US11545610B2 · kind B2 · utility
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1References
20Claims
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Key dates
| Filing date | Mar 15, 2018 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | May 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a piezoelectric sensor, a pressure detecting device, their manufacturing methods and a detection method. The piezoelectric sensor comprises a thin film transistor located on a substrate and comprising an active layer, and a piezoelectric layer that is in contact with the active layer of the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.